Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Investigation of source-follower type analog buffer using low temperature poly-Si TFTs

A new source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analog buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) is proposed and measured. Threshold voltage compensation circuit with two n-type thin film transistors, a capacitor, and four switc...

متن کامل

Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors

This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension a...

متن کامل

Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.

متن کامل

Investigation on Fin and Gate Line Edge Roughness Effects for Sub-22 nm Inversion-Mode and Junctionless FinFETs

In this paper we investigated the line edge roughness (LER) effects on the 22-nm and 14nm inversion mode (IM) and jounctionless (JL) FinFETs by TCAD simulation. We examined the gate LER (GLER) effects and the fin LER (FLER) effects on the device variability separately. The simulation results show that the GLER-induced device variations will increase as the channel length decrease as expectation...

متن کامل

A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, wi...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Journal of the Electron Devices Society

سال: 2019

ISSN: 2168-6734

DOI: 10.1109/jeds.2019.2896599